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AgGaSe2: A highly photoconductive material

Author:
Roy, U. N.  Cui, Y.  Hawrami, R.  Burger, A.  Orona, L.  Goldstein, J. T.  


Journal:
SOLID STATE COMMUNICATIONS


Issue Date:
2006


Abstract(summary):

High resistivity single crystals of AgGaSe2 were grown by the horizontal Bridgman technique. The near band edge photoconductivity of the grown crystal at room temperature was found to be up to 2 x 10(4) times higher than the dark conductivity, under the illumination of 10(-3) W/cm(2). The photoconductivity spectrum consists primarily of three peaks, which are attributed to the transitions from Gamma(7)(A), Gamma(6)(B) and Gamma(7)(C) states of valence band to the conduction band Gamma(6). The crystal field splitting and the spin-orbit splitting were determined from these peak energy positions of the photoconductivity spectrum. (c) 2006 Elsevier Ltd. All rights reserved.


Page:
527---530


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